FET parameters:

Parameter	Definition
F1	Drain to source resistance $R_{ds}(\Omega)$
F2	Transconductance $G_{m}(1/\Omega)$
F3	Gate to source capacitance $C_{gs}(Farads)$
F4	Gate to drain capacitance $C_{gd}(Farads)$
F5	Drain to source capacitance $C_{ds}(Farads)$
F6	Drain bias current $I_{d}(Amps)$
F7	DC gate current $I_{g}(Amps)$
F8	Drain shot noise 1/f corner $(Hertz)$
F9	Gate shot noise 1/f corner $(Hertz)$

The noise sources are determined from the Gm, Id, and Ig parameters. See Appendix B for more information on FET noise sources.

Example:

* FET with Rds = 10K, Gm = .005, Cgs = 6pfd, Cgd = 2pfd,

* Cds = 1.5pfd, Id = 200uA, Ig = 50 pA,

* 1/f(drain) = 100Hz, 1/f(gate) = 1KHz.

.MODEL FET1 1.e4, .005, 6.e-12, 2.e-12, 1.5e-12, 2.e-4 \

     5.e-11, 100., 1.e3